{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10535652","patent":{"patent_number":"US-10535652","title":"Fabrication of vertical fin field effect transistors having top air spacers and a self-aligned top junction","assignee":null,"inventors":[],"filing_date":"2016-10-27T00:00:00.000Z","publication_date":"2020-01-14T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":14,"abstract":"A method of fabricating adjacent vertical fins with top source/drains having an air spacer and a self-aligned top junction, including, forming two or more vertical fins on a bottom source/drain, forming a top source/drain on each of the two or more vertical fins, wherein the top source/drains are formed to a size that leaves a gap between the adjacent vertical fins, and forming a source/drain liner on the top source/drains, where the source/drain liner occludes the gap between adjacent top source/drains to form a void space between adjacent vertical fins."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Fabrication of vertical fin field effect transistors having top air spacers and a self-aligned top junction","description":"A method of fabricating adjacent vertical fins with top source/drains having an air spacer and a self-aligned top junction, including, forming two or more vertical fins on a bottom source/drain, formi","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10535652","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10535652","citation_suggestion":"Patentable. \"Fabrication of vertical fin field effect transistors having top air spacers and a self-aligned top junction\" (US-10535652). https://patentable.app/patents/US-10535652","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10535652","json":"https://patentable.app/api/llm-context/US-10535652","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T15:32:05.967Z"}