{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10535654","patent":{"patent_number":"US-10535654","title":"Cut metal gate with slanted sidewalls","assignee":null,"inventors":[],"filing_date":"2018-02-26T00:00:00.000Z","publication_date":"2020-01-14T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A semiconductor device includes a substrate, first and second fins protruding out of the substrate, and first and second high-k metal gates (HK MG) disposed over the first and second fins, respectively. From a top view, the first and second fins are arranged lengthwise along a first direction, the first and second HK MG are arranged lengthwise along a second direction generally perpendicular to the first direction, and the first and second HK MG are aligned along the second direction. In a cross-sectional view cut along the second direction, the first HK MG has a first sidewall that is slanted from top to bottom towards the second HK MG, and the second HK MG has a second sidewall that is slanted from top to bottom towards the first HK MG. Methods for producing the semiconductor device are also disclosed."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Cut metal gate with slanted sidewalls","description":"A semiconductor device includes a substrate, first and second fins protruding out of the substrate, and first and second high-k metal gates (HK MG) disposed over the first and second fins, respectivel","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10535654","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10535654","citation_suggestion":"Patentable. \"Cut metal gate with slanted sidewalls\" (US-10535654). https://patentable.app/patents/US-10535654","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10535654","json":"https://patentable.app/api/llm-context/US-10535654","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T14:42:57.491Z"}