{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10535658","patent":{"patent_number":"US-10535658","title":"Memory device with reduced-resistance interconnect","assignee":null,"inventors":[],"filing_date":"2018-08-22T00:00:00.000Z","publication_date":"2020-01-14T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C","H01L","H01L","H01L","G11C"],"num_claims":18,"abstract":"Some embodiments relate to a memory device including first and second conductive lines extending generally in parallel with one another within over a row of memory cells. A centerline extends generally in parallel with the first and second conductive lines and is spaced between the first and second conductive lines. A first plurality of conductive line segments is over the first conductive line. Conductive line segments of the first plurality of conductive line segments are coupled to different locations on the first conductive line. A second plurality of conductive line segments are disposed over the second conductive line, and are coupled to different locations on the second conductive line."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Memory device with reduced-resistance interconnect","description":"Some embodiments relate to a memory device including first and second conductive lines extending generally in parallel with one another within over a row of memory cells. A centerline extends generall","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10535658","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10535658","citation_suggestion":"Patentable. \"Memory device with reduced-resistance interconnect\" (US-10535658). https://patentable.app/patents/US-10535658","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10535658","json":"https://patentable.app/api/llm-context/US-10535658","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T20:58:46.187Z"}