{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10535660","patent":{"patent_number":"US-10535660","title":"Dynamic random access memory structure and method for preparing the same","assignee":null,"inventors":[],"filing_date":"2018-08-30T00:00:00.000Z","publication_date":"2020-01-14T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":11,"abstract":"The present disclosure provides a DRAM cell structure. The DRAM cell structure includes a substrate, a gate structure disposed in the substrate, a first source/drain region and a second source/drain region disposed in the substrate respectively at two sides of the gate structure, a landing pad disposed over the second source/drain region, a plurality of conductive pillars disposed on the landing pad, a conductive layer disposed over the plurality of conductive pillars, and a dielectric layer disposed between the conductive layer and the plurality of conductive pillars. The plurality of conductive pillars have at least a first width and a second width, and the first width and the second width are different from each other."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Dynamic random access memory structure and method for preparing the same","description":"The present disclosure provides a DRAM cell structure. The DRAM cell structure includes a substrate, a gate structure disposed in the substrate, a first source/drain region and a second source/drain r","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10535660","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10535660","citation_suggestion":"Patentable. \"Dynamic random access memory structure and method for preparing the same\" (US-10535660). https://patentable.app/patents/US-10535660","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10535660","json":"https://patentable.app/api/llm-context/US-10535660","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T10:18:14.190Z"}