{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10535665","patent":{"patent_number":"US-10535665","title":"Integrated assemblies having continuous high-dielectric films extending across channel regions of adjacent transistors","assignee":null,"inventors":[],"filing_date":"2018-09-07T00:00:00.000Z","publication_date":"2020-01-14T00:00:00.000Z","cpc_codes":["G11C"],"num_claims":18,"abstract":"Some embodiments include an integrated assembly having a first transistor adjacent to a second transistor. The first transistor has a first conductive gate material over a first insulative region, and the second transistor has a second conductive gate material over a second insulative region. A continuous high-k dielectric film extends across both of the first and second insulative regions. In some embodiments, the transistors may be incorporated into a sense amplifier."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Integrated assemblies having continuous high-dielectric films extending across channel regions of adjacent transistors","description":"Some embodiments include an integrated assembly having a first transistor adjacent to a second transistor. The first transistor has a first conductive gate material over a first insulative region, and","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10535665","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10535665","citation_suggestion":"Patentable. \"Integrated assemblies having continuous high-dielectric films extending across channel regions of adjacent transistors\" (US-10535665). https://patentable.app/patents/US-10535665","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10535665","json":"https://patentable.app/api/llm-context/US-10535665","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T18:23:50.238Z"}