{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10535668","patent":{"patent_number":"US-10535668","title":"Using three or more masks to define contact-line-blocking components in FinFET SRAM fabrication","assignee":null,"inventors":[],"filing_date":"2019-10-16T00:00:00.000Z","publication_date":"2020-01-14T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A plurality of gate stacks is formed over a substrate. The gate stacks are surrounded by a dielectric structure. A plurality of contact-line-blocking patterns is formed over the dielectric structure. The contact-line-blocking patterns are formed using three or more lithography masks. A plurality of trenches is formed in the dielectric structure. The contact-line-blocking patterns serve as protective masks for the dielectric structure to prevent trenches from being formed in portions of the dielectric structure underneath the contact-line-blocking patterns. The trenches are filled with a conductive material to form a plurality of contact lines of the SRAM device."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Using three or more masks to define contact-line-blocking components in FinFET SRAM fabrication","description":"A plurality of gate stacks is formed over a substrate. The gate stacks are surrounded by a dielectric structure. A plurality of contact-line-blocking patterns is formed over the dielectric structure. ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10535668","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10535668","citation_suggestion":"Patentable. \"Using three or more masks to define contact-line-blocking components in FinFET SRAM fabrication\" (US-10535668). https://patentable.app/patents/US-10535668","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10535668","json":"https://patentable.app/api/llm-context/US-10535668","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T21:45:00.248Z"}