{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10535743","patent":{"patent_number":"US-10535743","title":"Metallization and its use in, in particular, an IGBT or a diode","assignee":null,"inventors":[],"filing_date":"2017-09-19T00:00:00.000Z","publication_date":"2020-01-14T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":22,"abstract":"A vertical power semiconductor component includes a semiconductor chip, the semiconductor chip having a top main surface and a bottom main surface. Each of said top main surface and said bottom main surface is in a heat exchanging relationship with a top metallization layer and a bottom metallization each of which serving as a heat sink. Each of said top metallization layer and said bottom metallization layer have a layer thickness of at least 15 μm and have a specific heat capacity per volume that is at least a factor of 1.3 higher than the specific heat capacity per volume of the semiconductor chip. Each of said top metallization layer and said bottom metallization layer serving as a heat sink contacts the respective main surface via a respective diffusion barrier layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Metallization and its use in, in particular, an IGBT or a diode","description":"A vertical power semiconductor component includes a semiconductor chip, the semiconductor chip having a top main surface and a bottom main surface. Each of said top main surface and said bottom main s","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10535743","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10535743","citation_suggestion":"Patentable. \"Metallization and its use in, in particular, an IGBT or a diode\" (US-10535743). https://patentable.app/patents/US-10535743","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10535743","json":"https://patentable.app/api/llm-context/US-10535743","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T08:37:10.403Z"}