{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10535753","patent":{"patent_number":"US-10535753","title":"Method of manufacturing a bipolar transistor with trench structure","assignee":null,"inventors":[],"filing_date":"2019-05-31T00:00:00.000Z","publication_date":"2020-01-14T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":8,"abstract":"The present disclosure relates to a semiconductor structure and a manufacturing process therefor. Provided is a method for manufacturing a bipolar transistor with a trench structure, including providing a semiconductor substrate; fabricating a shallow trench isolation structure to define a device active area; forming an N-type well and a P-type well in the active area to define a first region, a second region and a third region of the bipolar transistor; etching a portion, adjacent to the shallow trench isolation structure, in the first region to form a trench; performing ion implantation to form an emitter, a base and a collector of the bipolar transistor; forming a salicide block structure in the trench; and forming a metal electrode of the bipolar transistor, wherein the emitter is formed in the first region. The present disclosure further provides a bipolar transistor with a trench structure."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of manufacturing a bipolar transistor with trench structure","description":"The present disclosure relates to a semiconductor structure and a manufacturing process therefor. Provided is a method for manufacturing a bipolar transistor with a trench structure, including providi","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10535753","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10535753","citation_suggestion":"Patentable. \"Method of manufacturing a bipolar transistor with trench structure\" (US-10535753). https://patentable.app/patents/US-10535753","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10535753","json":"https://patentable.app/api/llm-context/US-10535753","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T08:36:12.991Z"}