{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10535764","patent":{"patent_number":"US-10535764","title":"Device and fabrication of MOS device with island region","assignee":null,"inventors":[],"filing_date":"2018-07-31T00:00:00.000Z","publication_date":"2020-01-14T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":4,"abstract":"Fabricating a semiconductor device includes: forming a first gate trench and a second gate trench in an epitaxial layer overlaying a semiconductor substrate; depositing gate material in the first gate trench to form a first gate and depositing gate material in the second gate trench to form a second gate; forming a body; forming a source; forming an active region contact trench that extends through the source and the body, and a gate contact trench within the second gate; forming an island region under the active region contact trench and disconnected from the body, the island region having an opposite polarity as the epitaxial layer; and disposing a first electrode within the active region contact trench and a second electrode within the gate contact trench."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Device and fabrication of MOS device with island region","description":"Fabricating a semiconductor device includes: forming a first gate trench and a second gate trench in an epitaxial layer overlaying a semiconductor substrate; depositing gate material in the first gate","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10535764","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10535764","citation_suggestion":"Patentable. \"Device and fabrication of MOS device with island region\" (US-10535764). https://patentable.app/patents/US-10535764","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10535764","json":"https://patentable.app/api/llm-context/US-10535764","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T21:46:25.790Z"}