{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10535771","patent":{"patent_number":"US-10535771","title":"Method for forming replacement air gap","assignee":null,"inventors":[],"filing_date":"2018-06-25T00:00:00.000Z","publication_date":"2020-01-14T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":20,"abstract":"A method of forming transistor devices with an air gap in the replacement gate structure is disclosed including forming a placeholder gate structure above a semiconductor material region, forming a sidewall spacer adjacent the placeholder gate structure, removing the placeholder gate structure to define a gate cavity bounded by the sidewall spacer, forming a gate insulation layer in the gate cavity, the gate insulation layer including a first portion having a first thickness and a second portion having a second thickness greater than the first thickness, forming a gate electrode in the gate cavity above the gate insulation layer, removing at least a portion of the second portion of the gate insulation layer to define an air gap cavity adjacent the gate electrode, and forming a first gate cap layer above the gate electrode, wherein the first gate cap layer seals an upper end of the air gap cavity."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for forming replacement air gap","description":"A method of forming transistor devices with an air gap in the replacement gate structure is disclosed including forming a placeholder gate structure above a semiconductor material region, forming a si","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10535771","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10535771","citation_suggestion":"Patentable. \"Method for forming replacement air gap\" (US-10535771). https://patentable.app/patents/US-10535771","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10535771","json":"https://patentable.app/api/llm-context/US-10535771","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T19:15:56.935Z"}