{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10535773","patent":{"patent_number":"US-10535773","title":"FinFET with sigma recessed source/drain and un-doped buffer layer epitaxy for uniform junction formation","assignee":null,"inventors":[],"filing_date":"2018-12-28T00:00:00.000Z","publication_date":"2020-01-14T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":11,"abstract":"After forming a gate structure over a semiconductor fin that extends upwards from a semiconductor substrate portion, a sigma cavity is formed within the semiconductor fin on each side of the gate structure. A semiconductor buffer region composed of an un-doped stress-generating semiconductor material is epitaxially growing from faceted surfaces of the sigma cavity. Finally, a doped semiconductor region composed of a doped stress-generating semiconductor material is formed on the semiconductor buffer region to completely fill the sigma cavity. The doped semiconductor region is formed to have substantially vertical sidewalls for formation of a uniform source/drain junction profile."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"FinFET with sigma recessed source/drain and un-doped buffer layer epitaxy for uniform junction formation","description":"After forming a gate structure over a semiconductor fin that extends upwards from a semiconductor substrate portion, a sigma cavity is formed within the semiconductor fin on each side of the gate stru","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10535773","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10535773","citation_suggestion":"Patentable. \"FinFET with sigma recessed source/drain and un-doped buffer layer epitaxy for uniform junction formation\" (US-10535773). https://patentable.app/patents/US-10535773","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10535773","json":"https://patentable.app/api/llm-context/US-10535773","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T21:44:55.677Z"}