{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10535777","patent":{"patent_number":"US-10535777","title":"Nanoribbon structures with recessed source-drain epitaxy","assignee":null,"inventors":[],"filing_date":"2018-03-29T00:00:00.000Z","publication_date":"2020-01-14T00:00:00.000Z","cpc_codes":["B82Y","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"Nanoribbon Field Effect Transistors (FETs) offer significant performance increases and energy consumption decreases relative to traditional metal oxide semiconductor (MOS) transistors. Various embodiments are directed to nanoribbon FETs having III-N channel materials and methods of forming the same. An integrated circuit (IC) structure can include a first layer on a substrate. The first layer can include a group III semiconductor material and nitrogen. The IC structure can include recessed source and drain regions formed on the first layer using planar epitaxy. The IC structure can include a second layer between the recessed source and drain. A gate wraps around at least part of the second layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Nanoribbon structures with recessed source-drain epitaxy","description":"Nanoribbon Field Effect Transistors (FETs) offer significant performance increases and energy consumption decreases relative to traditional metal oxide semiconductor (MOS) transistors. Various embodim","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10535777","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10535777","citation_suggestion":"Patentable. \"Nanoribbon structures with recessed source-drain epitaxy\" (US-10535777). https://patentable.app/patents/US-10535777","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10535777","json":"https://patentable.app/api/llm-context/US-10535777","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T03:22:51.807Z"}