{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10541014","patent":{"patent_number":"US-10541014","title":"Memory cells with enhanced tunneling magnetoresistance ratio, memory devices and systems including the same","assignee":null,"inventors":[],"filing_date":"2015-12-24T00:00:00.000Z","publication_date":"2020-01-21T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C","G11C","G11C"],"num_claims":21,"abstract":"Memory cells with improved tunneling magnetoresistance ratio (TMR) are disclosed. In some embodiments such devices may include a magnetoresistive tunnel junction (MTJ) element coupled in series with a tunneling magnetoresistance enhancement element (TMRE). The MTJ element and TMRE may each be configured to transition between high and low resistance states, e.g., in response to a voltage. In some embodiments, the MTJ and TMRE are configure such that when a read voltage is applied to the cell while the MTJ is in its low resistance state the TMRE is driven to is low resistance state, and when such voltage is applied while the MTJ is in its high resistance state, the TMRE remains in its high resistance state. Devices and systems including such memory cells are also disclosed."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Memory cells with enhanced tunneling magnetoresistance ratio, memory devices and systems including the same","description":"Memory cells with improved tunneling magnetoresistance ratio (TMR) are disclosed. In some embodiments such devices may include a magnetoresistive tunnel junction (MTJ) element coupled in series with a","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10541014","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10541014","citation_suggestion":"Patentable. \"Memory cells with enhanced tunneling magnetoresistance ratio, memory devices and systems including the same\" (US-10541014). https://patentable.app/patents/US-10541014","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10541014","json":"https://patentable.app/api/llm-context/US-10541014","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T16:19:16.469Z"}