{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10541127","patent":{"patent_number":"US-10541127","title":"Material layers, semiconductor devices including the same, and methods of fabricating material layers and semiconductor devices","assignee":null,"inventors":[],"filing_date":"2016-10-28T00:00:00.000Z","publication_date":"2020-01-21T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":16,"abstract":"A material layer, a semiconductor device including the material layer, and methods of forming the material layer and the semiconductor device are provided herein. A method of forming a SiOCN material layer may include supplying a silicon source onto a substrate, supplying a carbon source onto the substrate, supplying an oxygen source onto the substrate, supplying a nitrogen source onto the substrate, and supplying hydrogen onto the substrate. When a material layer is formed according to a method of the present inventive concepts, a material layer having a high tolerance to wet etching and/or good electric characteristics may be formed, and may even be formed when the method is performed at a low temperature."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Material layers, semiconductor devices including the same, and methods of fabricating material layers and semiconductor devices","description":"A material layer, a semiconductor device including the material layer, and methods of forming the material layer and the semiconductor device are provided herein. A method of forming a SiOCN material ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10541127","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10541127","citation_suggestion":"Patentable. \"Material layers, semiconductor devices including the same, and methods of fabricating material layers and semiconductor devices\" (US-10541127). https://patentable.app/patents/US-10541127","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10541127","json":"https://patentable.app/api/llm-context/US-10541127","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T21:22:45.146Z"}