{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10541128","patent":{"patent_number":"US-10541128","title":"Method for making VFET devices with ILD protection","assignee":null,"inventors":[],"filing_date":"2016-08-19T00:00:00.000Z","publication_date":"2020-01-21T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L"],"num_claims":13,"abstract":"A method of forming a semiconductor device and resulting structures having an etch-resistant interlayer dielectric (ILD) that maintains height during a top epitaxy clean by forming a dielectric layer on a semiconductor structure; wherein the dielectric layer includes a first dielectric material; converting at least a portion of the dielectric layer to a second dielectric material; and exposing the portion of the dielectric layer to an etch material; wherein the etch material includes a first etch characteristic defining a first rate at which the etch material etches the first dielectric material; and wherein the etch material further includes a second etch characteristic defining a second rate at which the etch material etches the portion of the dielectric layer; wherein the first rate is different than the second rate."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for making VFET devices with ILD protection","description":"A method of forming a semiconductor device and resulting structures having an etch-resistant interlayer dielectric (ILD) that maintains height during a top epitaxy clean by forming a dielectric layer ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10541128","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10541128","citation_suggestion":"Patentable. \"Method for making VFET devices with ILD protection\" (US-10541128). https://patentable.app/patents/US-10541128","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10541128","json":"https://patentable.app/api/llm-context/US-10541128","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T00:41:28.297Z"}