{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10541133","patent":{"patent_number":"US-10541133","title":"GaAs thin film grown on Si substrate, and preparation method for GaAs thin film grown on Si substrate","assignee":null,"inventors":[],"filing_date":"2016-08-18T00:00:00.000Z","publication_date":"2020-01-21T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":4,"abstract":"Disclosed is a preparation method for a GaAs thin film grown on an Si substrate, said method comprising the following steps: (1) Si (111) substrate cleaning; (2) Si (111) substrate preprocessing; (3) Si (111) substrate oxide film removal; (4) first InxGa1-xAs buffer layer growth; (5) first InxGa1-xAs buffer layer in situ annealing; (6) GaAs buffer layer growth; (7) GaAs buffer layer in situ annealing; (8) second InxGa1-xAs buffer layer growth; (9) second InxGa1-xAs buffer layer in situ annealing; (10) GaAs epitaxial thin film growth. Also disclosed is a GaAs thin film grown on an Si substrate. The GaAs thin film obtained by the present invention has a good crystal quality, an even surface, and a positive promotional significance with regard to the preparation of semiconductor devices, particularly in the field of solar cells."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"GaAs thin film grown on Si substrate, and preparation method for GaAs thin film grown on Si substrate","description":"Disclosed is a preparation method for a GaAs thin film grown on an Si substrate, said method comprising the following steps: (1) Si (111) substrate cleaning; (2) Si (111) substrate preprocessing; (3) ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10541133","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10541133","citation_suggestion":"Patentable. \"GaAs thin film grown on Si substrate, and preparation method for GaAs thin film grown on Si substrate\" (US-10541133). https://patentable.app/patents/US-10541133","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10541133","json":"https://patentable.app/api/llm-context/US-10541133","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T14:29:54.535Z"}