{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10541135","patent":{"patent_number":"US-10541135","title":"Source and drain formation using self-aligned processes","assignee":null,"inventors":[],"filing_date":"2018-10-17T00:00:00.000Z","publication_date":"2020-01-21T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":15,"abstract":"An approach to deposit, by a self-aligning process, a layer of graphene on a gate formed on a dielectric layer on a semiconductor substrate where the gate includes a metal catalyst material. The approach includes removing a portion of the dielectric layer and a portion of the semiconductor substrate not under the gate and depositing, by a self-aligning atomic layer deposition process, a layer of a material capable of creating a source and a drain in a semiconductor device on exposed surfaces of the semiconductor substrate and the dielectric layer. The approach includes removing the layer of graphene from the gate, and, then removing a portion of the layer of the material capable of creating the source and the drain in the semiconductor device."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Source and drain formation using self-aligned processes","description":"An approach to deposit, by a self-aligning process, a layer of graphene on a gate formed on a dielectric layer on a semiconductor substrate where the gate includes a metal catalyst material. The appro","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10541135","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10541135","citation_suggestion":"Patentable. \"Source and drain formation using self-aligned processes\" (US-10541135). https://patentable.app/patents/US-10541135","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10541135","json":"https://patentable.app/api/llm-context/US-10541135","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T14:30:16.566Z"}