{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10541136","patent":{"patent_number":"US-10541136","title":"N-type doping of strained epitaxial germanium films through co-implantation and nanosecond pulsed laser melting","assignee":null,"inventors":[],"filing_date":"2017-11-29T00:00:00.000Z","publication_date":"2020-01-21T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":10,"abstract":"In one aspect a method of fabricating an n-doped strained germanium (Ge) film is disclosed, which includes depositing a strained Ge film on an underlying substrate, implanting at least one electron-donating dopant in the Ge film, and exposing the implanted Ge film to one or more laser pulses having a pulsewidth in a range of about 1 ns to about 100 ms so as to generate a substantially crystalline strained Ge film. In some embodiments, the pulses can cause melting followed by substantial recrystallization of at least a portion of the implanted Ge film. In some embodiments, the resultant Ge film can have a thickness in a range of about 10 nm to about 1 microns."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"N-type doping of strained epitaxial germanium films through co-implantation and nanosecond pulsed laser melting","description":"In one aspect a method of fabricating an n-doped strained germanium (Ge) film is disclosed, which includes depositing a strained Ge film on an underlying substrate, implanting at least one electron-do","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10541136","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10541136","citation_suggestion":"Patentable. \"N-type doping of strained epitaxial germanium films through co-implantation and nanosecond pulsed laser melting\" (US-10541136). https://patentable.app/patents/US-10541136","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10541136","json":"https://patentable.app/api/llm-context/US-10541136","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T15:37:55.112Z"}