{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10541238","patent":{"patent_number":"US-10541238","title":"FinFET and fabrication method thereof","assignee":null,"inventors":[],"filing_date":"2017-03-30T00:00:00.000Z","publication_date":"2020-01-21T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L"],"num_claims":13,"abstract":"A method is provided for fabricating a FinFET. The method includes providing a substrate including an NMOS region; forming a plurality of fins on the substrate; forming an isolation layer between adjacent fins and on the substrate; forming a gate structure across a length portion of the fin; forming a first mask layer on the top surface and sidewalls of the fin; etching the first mask layer to expose the top surface of the fin on both sides of the gate structure; removing a thickness portion of the fin on both sides of the gate structure, wherein the etched fin and the remaining first mask layer form a first trench; performing a thinning treatment of the remaining first mask layer on a sidewall of the first trench to increase width of the first trench; and forming an N-type in-situ doped epitaxial layer to fill up the first trench."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"FinFET and fabrication method thereof","description":"A method is provided for fabricating a FinFET. The method includes providing a substrate including an NMOS region; forming a plurality of fins on the substrate; forming an isolation layer between adja","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10541238","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10541238","citation_suggestion":"Patentable. \"FinFET and fabrication method thereof\" (US-10541238). https://patentable.app/patents/US-10541238","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10541238","json":"https://patentable.app/api/llm-context/US-10541238","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T13:42:58.683Z"}