{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10541253","patent":{"patent_number":"US-10541253","title":"FinFETs with various fin height","assignee":null,"inventors":[],"filing_date":"2018-09-30T00:00:00.000Z","publication_date":"2020-01-21T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A method of forming a semiconductor circuit having FinFET devices that have fins of different height is provided. There is a shallow trench isolation layer (STI) on top of a semiconductor substrate. A first Fin Field Effect Transistor (FinFET) comprises a first semiconductor fin including a first layer that extends from a common substrate level through the STI layer to a first height above a top surface of the STI layer. There is a second FinFET comprising a second semiconductor fin including the first layer that extends from the common substrate level through the STI layer to the first height above the top surface of the STI layer, plus a second layer having a second height, plus a third layer having a third height. The second semiconductor fin is taller than the first semiconductor fin."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"FinFETs with various fin height","description":"A method of forming a semiconductor circuit having FinFET devices that have fins of different height is provided. There is a shallow trench isolation layer (STI) on top of a semiconductor substrate. A","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10541253","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10541253","citation_suggestion":"Patentable. \"FinFETs with various fin height\" (US-10541253). https://patentable.app/patents/US-10541253","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10541253","json":"https://patentable.app/api/llm-context/US-10541253","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T13:52:03.703Z"}