{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10541309","patent":{"patent_number":"US-10541309","title":"Semiconductor structure and method for fabricating the same","assignee":null,"inventors":[],"filing_date":"2017-12-25T00:00:00.000Z","publication_date":"2020-01-21T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":7,"abstract":"A semiconductor structure is disclosed. The semiconductor structure includes first and second metal gates on a substrate with a gap therebetween. The first metal gate has a first sidewall, and the second metal gate has a second sidewall directly facing the first sidewall. A contact etch stop layer (CESL) is disposed within the gap and extends along the first and second sidewalls. The CESL has a first top portion adjacent to a top surface of the first metal gate and a second top portion adjacent to a top surface of the second metal gate. The first top portion and the second top portion have a trapezoid cross-sectional profile. A first sidewall spacer is disposed on the first sidewall and between the CESL and the first metal gate. A second sidewall spacer is disposed on the second sidewall and between the CESL and the second metal gate."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor structure and method for fabricating the same","description":"A semiconductor structure is disclosed. The semiconductor structure includes first and second metal gates on a substrate with a gap therebetween. The first metal gate has a first sidewall, and the sec","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10541309","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10541309","citation_suggestion":"Patentable. \"Semiconductor structure and method for fabricating the same\" (US-10541309). https://patentable.app/patents/US-10541309","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10541309","json":"https://patentable.app/api/llm-context/US-10541309","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T09:23:05.972Z"}