{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10541312","patent":{"patent_number":"US-10541312","title":"Air-gap top spacer and self-aligned metal gate for vertical fets","assignee":null,"inventors":[],"filing_date":"2018-07-24T00:00:00.000Z","publication_date":"2020-01-21T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A transistor includes a channel fin. A gate stack is formed on sidewalls of the channel fin. A top spacer is formed over the gate stack. The top spacer includes dielectric material that fully encapsulates air gaps directly above the gate stack. A top source/drain region formed on the channel fin."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Air-gap top spacer and self-aligned metal gate for vertical fets","description":"A transistor includes a channel fin. A gate stack is formed on sidewalls of the channel fin. A top spacer is formed over the gate stack. The top spacer includes dielectric material that fully encapsul","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10541312","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10541312","citation_suggestion":"Patentable. \"Air-gap top spacer and self-aligned metal gate for vertical fets\" (US-10541312). https://patentable.app/patents/US-10541312","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10541312","json":"https://patentable.app/api/llm-context/US-10541312","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T01:13:09.836Z"}