{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10541314","patent":{"patent_number":"US-10541314","title":"Semiconductor devices and fabrication methods thereof","assignee":null,"inventors":[],"filing_date":"2018-06-08T00:00:00.000Z","publication_date":"2020-01-21T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":14,"abstract":"A method for fabricating a semiconductor device includes providing a base substrate, forming a plurality of doped regions in the base substrate, forming an initial capping layer covering surfaces of the plurality of doped regions, forming a dielectric layer on the initial capping layer and the base substrate, forming a plurality of vias in the dielectric layer to expose a surface portion of the initial capping layer, and etching the exposed surface portion of the initial capping layer at a bottom of each via to form a silicide region exposed at the bottom of the via. The silicide region has a reduced thickness compared with a thickness of the initial capping layer. The method further includes forming a metal silicide layer by performing a self-aligned silicide process on an entire silicide region. The metal silicide layer is in contact with the plurality of doped regions."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor devices and fabrication methods thereof","description":"A method for fabricating a semiconductor device includes providing a base substrate, forming a plurality of doped regions in the base substrate, forming an initial capping layer covering surfaces of t","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10541314","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10541314","citation_suggestion":"Patentable. \"Semiconductor devices and fabrication methods thereof\" (US-10541314). https://patentable.app/patents/US-10541314","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10541314","json":"https://patentable.app/api/llm-context/US-10541314","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T13:16:52.052Z"}