{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10541321","patent":{"patent_number":"US-10541321","title":"Manufacturing method of semiconductor device","assignee":null,"inventors":[],"filing_date":"2018-07-05T00:00:00.000Z","publication_date":"2020-01-21T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":13,"abstract":"In a manufacturing method of a semiconductor device according to the present invention, a buffer layer including a first nitride semiconductor layer, a channel layer including a second nitride semiconductor layer, and a barrier layer including a third nitride semiconductor layer are sequentially laminated, and a fourth nitride semiconductor layer is further laminated thereover. Then, a laminate of a gate insulating film and a gate electrode is formed over a first region of the fourth nitride semiconductor layer, and a silicon nitride film is formed over the fourth nitride semiconductor layer and the laminate. By bringing the fourth nitride semiconductor layers on both sides of the gate electrode into contact with the silicon nitride film in this way, the function of suppressing 2DEG can be lowered, and the 2DEG that has been eliminated after the formation of the fourth nitride semiconductor layer can be restored. The lowering in the function of suppressing 2DEG is maintained even after the silicon nitride film is removed."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Manufacturing method of semiconductor device","description":"In a manufacturing method of a semiconductor device according to the present invention, a buffer layer including a first nitride semiconductor layer, a channel layer including a second nitride semicon","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10541321","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10541321","citation_suggestion":"Patentable. \"Manufacturing method of semiconductor device\" (US-10541321). https://patentable.app/patents/US-10541321","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10541321","json":"https://patentable.app/api/llm-context/US-10541321","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T23:57:20.612Z"}