{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10541322","patent":{"patent_number":"US-10541322","title":"Semiconductor device","assignee":null,"inventors":[],"filing_date":"2018-01-05T00:00:00.000Z","publication_date":"2020-01-21T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":9,"abstract":"A nitride semiconductor device is disclosed. The semiconductor device includes a semiconductor stack with a top layer containing gallium (Ga) and nitrogen (N), electrodes of a source, a gate and a drain provided on the semiconductor stack, and a silicon nitride (SiN) film provided on the GaN layer between the drain electrode and the gate electrode but apart from the gate electrode. The SiN film has a silicon rich composition with a composition ratio of Si/N that is greater than 3/4 and substantial oxygen contents."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device","description":"A nitride semiconductor device is disclosed. The semiconductor device includes a semiconductor stack with a top layer containing gallium (Ga) and nitrogen (N), electrodes of a source, a gate and a dra","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10541322","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10541322","citation_suggestion":"Patentable. \"Semiconductor device\" (US-10541322). https://patentable.app/patents/US-10541322","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10541322","json":"https://patentable.app/api/llm-context/US-10541322","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T08:31:51.699Z"}