{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10541324","patent":{"patent_number":"US-10541324","title":"Semiconductor device with a recessed ohmic contact and methods of fabrication","assignee":null,"inventors":[],"filing_date":"2017-06-19T00:00:00.000Z","publication_date":"2020-01-21T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L"],"num_claims":15,"abstract":"An embodiment of a semiconductor device includes a semiconductor substrate that includes a host substrate, a buffer layer that includes at least one additional layer formed over the substrate, a channel layer formed over the buffer layer, a barrier layer formed over the channel layer forming a channel, a gate electrode disposed over the substrate electrically coupled to the channel, and an ohmic contact recessed into the barrier layer. A method for fabricating the semiconductor device includes forming a semiconductor substrate that includes a mixed crystal layer, creating an isolation region that defines an active region along an upper surface of the semiconductor substrate, forming a gate electrode over the semiconductor substrate in the active region, and recessing an ohmic contact into the semiconductor substrate."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device with a recessed ohmic contact and methods of fabrication","description":"An embodiment of a semiconductor device includes a semiconductor substrate that includes a host substrate, a buffer layer that includes at least one additional layer formed over the substrate, a chann","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10541324","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10541324","citation_suggestion":"Patentable. \"Semiconductor device with a recessed ohmic contact and methods of fabrication\" (US-10541324). https://patentable.app/patents/US-10541324","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10541324","json":"https://patentable.app/api/llm-context/US-10541324","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T23:46:34.765Z"}