{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10541334","patent":{"patent_number":"US-10541334","title":"Techniques for integration of Ge-rich p-MOS source/drain","assignee":null,"inventors":[],"filing_date":"2018-11-26T00:00:00.000Z","publication_date":"2020-01-21T00:00:00.000Z","cpc_codes":["B82Y","H01L","H01L","H01L"],"num_claims":20,"abstract":"Techniques are disclosed for improved integration of germanium (Ge)-rich p-MOS source/drain contacts to, for example, reduce contact resistance. The techniques include depositing the p-type Ge-rich layer directly on a silicon (Si) surface in the contact trench location, because Si surfaces are favorable for deposition of high quality conductive Ge-rich materials. In one example method, the Ge-rich layer is deposited on a surface of the Si substrate in the source/drain contact trench locations, after removing a sacrificial silicon germanium (SiGe) layer previously deposited in the source/drain locations. In another example method, the Ge-rich layer is deposited on a Si cladding layer in the contact trench locations, where the Si cladding layer is deposited on a functional p-type SiGe layer. In some cases, the Ge-rich layer comprises at least 50% Ge (and may contain tin (Sn) and/or Si) and is boron (B) doped at levels above 1E20 cm−3."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Techniques for integration of Ge-rich p-MOS source/drain","description":"Techniques are disclosed for improved integration of germanium (Ge)-rich p-MOS source/drain contacts to, for example, reduce contact resistance. The techniques include depositing the p-type Ge-rich la","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10541334","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10541334","citation_suggestion":"Patentable. \"Techniques for integration of Ge-rich p-MOS source/drain\" (US-10541334). https://patentable.app/patents/US-10541334","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10541334","json":"https://patentable.app/api/llm-context/US-10541334","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T21:25:07.791Z"}