{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10546775","patent":{"patent_number":"US-10546775","title":"Field-effect transistors with improved dielectric gap fill","assignee":null,"inventors":[],"filing_date":"2018-08-01T00:00:00.000Z","publication_date":"2020-01-28T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":19,"abstract":"Structures for a field-effect transistor and methods of forming a structure for a field-effect transistor. A first dielectric layer is deposited over a first gate structure in a first device area and a second gate structure in a second device area, and then planarized. A second dielectric layer is deposited over the planarized first dielectric layer, and then removed from the first device area. After removing the second dielectric layer from the first device area, the first dielectric layer in the first device area is recessed to expose the first gate structure. A silicide is formed on the exposed first gate structure."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Field-effect transistors with improved dielectric gap fill","description":"Structures for a field-effect transistor and methods of forming a structure for a field-effect transistor. A first dielectric layer is deposited over a first gate structure in a first device area and ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10546775","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10546775","citation_suggestion":"Patentable. \"Field-effect transistors with improved dielectric gap fill\" (US-10546775). https://patentable.app/patents/US-10546775","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10546775","json":"https://patentable.app/api/llm-context/US-10546775","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T10:43:17.102Z"}