{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10546776","patent":{"patent_number":"US-10546776","title":"Dual silicide liner flow for enabling low contact resistance","assignee":null,"inventors":[],"filing_date":"2016-10-06T00:00:00.000Z","publication_date":"2020-01-28T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":16,"abstract":"A method for fabricating a semiconductor device includes depositing a sacrificial liner in self-aligned contact openings in first and second regions. The openings are filled with a sacrificial material. The second region is blocked with a first mask to remove the sacrificial material from the first region. The first mask is removed from the second region, and the sacrificial liner is removed from the first region. A first liner is formed in the openings of the first region, and first contacts are formed in the first region on the first liner. The first region is blocked with a second mask to remove the sacrificial material from the second region. The second mask is removed from the first region, and the sacrificial liner is removed from the second region. A second liner is formed in the openings of the second region, and second contacts are formed in the second region."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Dual silicide liner flow for enabling low contact resistance","description":"A method for fabricating a semiconductor device includes depositing a sacrificial liner in self-aligned contact openings in first and second regions. The openings are filled with a sacrificial materia","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10546776","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10546776","citation_suggestion":"Patentable. \"Dual silicide liner flow for enabling low contact resistance\" (US-10546776). https://patentable.app/patents/US-10546776","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10546776","json":"https://patentable.app/api/llm-context/US-10546776","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T08:38:01.536Z"}