{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10546779","patent":{"patent_number":"US-10546779","title":"Through substrate via (TSV) and method therefor","assignee":null,"inventors":[],"filing_date":"2018-11-01T00:00:00.000Z","publication_date":"2020-01-28T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A through substrate via (TSV) and method of forming the same are provided. The method of making the TSV may include etching a via opening into the backside of semiconductor substrate, the via opening exposing a surface of a metal landing structure. A conductive layer is deposited over the backside of semiconductor substrate, sidewalls of the via opening, and exposed surface of the metal landing structure. The conductive layer is coated with a polymer material, filling the via opening. The polymer material is developed to remove the polymer material from the backside of semiconductor substrate, leaving the via opening filled with undeveloped polymer material. A planar backside surface of semiconductor substrate is formed by removing the conductive layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Through substrate via (TSV) and method therefor","description":"A through substrate via (TSV) and method of forming the same are provided. The method of making the TSV may include etching a via opening into the backside of semiconductor substrate, the via opening ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10546779","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10546779","citation_suggestion":"Patentable. \"Through substrate via (TSV) and method therefor\" (US-10546779). https://patentable.app/patents/US-10546779","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10546779","json":"https://patentable.app/api/llm-context/US-10546779","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T18:25:11.859Z"}