{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10546854","patent":{"patent_number":"US-10546854","title":"Methods of forming V0 structures for semiconductor devices by forming a protection layer with a non-uniform thickness","assignee":null,"inventors":[],"filing_date":"2015-06-05T00:00:00.000Z","publication_date":"2020-01-28T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":23,"abstract":"One illustrative method disclosed herein includes, among other things, forming a source/drain contact structure between two spaced-apart transistor gate structures, forming a non-uniform thickness layer of material on the upper surface of the gate cap layers and on the upper surface of the source/drain contact structure, wherein the non-uniform thickness layer of material is thicker above the gate cap layers than it is above the source/drain contact structure, forming an opening in the non-uniform thickness layer of material so as to expose at least a portion of the source/drain contact structure, and forming a V0 via that is conductively coupled to the exposed portion of the source/drain contact structure, the V0 via being at least partially positioned in the opening in the non-uniform thickness layer of material."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Methods of forming V0 structures for semiconductor devices by forming a protection layer with a non-uniform thickness","description":"One illustrative method disclosed herein includes, among other things, forming a source/drain contact structure between two spaced-apart transistor gate structures, forming a non-uniform thickness lay","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10546854","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10546854","citation_suggestion":"Patentable. \"Methods of forming V0 structures for semiconductor devices by forming a protection layer with a non-uniform thickness\" (US-10546854). https://patentable.app/patents/US-10546854","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10546854","json":"https://patentable.app/api/llm-context/US-10546854","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T01:15:20.378Z"}