{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10546857","patent":{"patent_number":"US-10546857","title":"Vertical transistor transmission gate with adjacent NFET and PFET","assignee":null,"inventors":[],"filing_date":"2017-02-16T00:00:00.000Z","publication_date":"2020-01-28T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":10,"abstract":"A complementary metal oxide semiconductor (CMOS) vertical transistor structure with closely spaced p-type and n-type vertical field effect transistors (FETs) is provided. After forming a dielectric material portion contacting a proximal sidewall of a first semiconductor fin for formation of a p-type vertical FET and a proximal sidewall of a second semiconductor fin for formation of an n-type vertical FET, a first gate structure is formed contacting a distal sidewall of the first semiconductor fin, and a second gate structure is formed contacting a distal sidewall of the second semiconductor fin. Because no gate structures are formed between the first and second semiconductor fins, the p-type vertical FET is spaced from the n-type FET only by the dielectric material portion."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Vertical transistor transmission gate with adjacent NFET and PFET","description":"A complementary metal oxide semiconductor (CMOS) vertical transistor structure with closely spaced p-type and n-type vertical field effect transistors (FETs) is provided. After forming a dielectric ma","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10546857","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10546857","citation_suggestion":"Patentable. \"Vertical transistor transmission gate with adjacent NFET and PFET\" (US-10546857). https://patentable.app/patents/US-10546857","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10546857","json":"https://patentable.app/api/llm-context/US-10546857","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T01:15:49.284Z"}