{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10546858","patent":{"patent_number":"US-10546858","title":"Low damage self-aligned amphoteric FINFET tip doping","assignee":null,"inventors":[],"filing_date":"2015-06-27T00:00:00.000Z","publication_date":"2020-01-28T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":12,"abstract":"Monolithic finFETs including a majority carrier channel in a first III-V compound semiconductor material disposed on a second III-V compound semiconductor. While a mask, such as a sacrificial gate stack, is covering the channel region, a source of an amphoteric dopant is deposited over exposed fin sidewalls and diffused into the first III-V compound semiconductor material. The amphoteric dopant preferentially activates as a donor within the first III-V material and an acceptor with the second III-V material, providing transistor tip doping with a p-n junction between the first and second III-V materials. A lateral spacer is deposited to cover the tip portion of the fin. Source/drain regions in regions of the fin not covered by the mask or spacer electrically couple to the channel through the tip region. The channel mask is replaced with a gate stack."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Low damage self-aligned amphoteric FINFET tip doping","description":"Monolithic finFETs including a majority carrier channel in a first III-V compound semiconductor material disposed on a second III-V compound semiconductor. While a mask, such as a sacrificial gate sta","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10546858","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10546858","citation_suggestion":"Patentable. \"Low damage self-aligned amphoteric FINFET tip doping\" (US-10546858). https://patentable.app/patents/US-10546858","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10546858","json":"https://patentable.app/api/llm-context/US-10546858","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T14:41:59.064Z"}