{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10546878","patent":{"patent_number":"US-10546878","title":"Asymmetric junction engineering for narrow band gap MOSFET","assignee":null,"inventors":[],"filing_date":"2018-06-20T00:00:00.000Z","publication_date":"2020-01-28T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A method for forming a semiconductor device. It includes forming fin structures on a substrate, where the fin structure defines source and drain regions. It also includes forming a gate stack in contact with the fin structure, depositing an insulator on the substrate, and applying an etching process to remove portions of the insulator to form a trench to the source region. It also includes implanting a damaged epitaxial material into the trench and to the source regions, and applying a second etching process to remove portions of the insulator to form a trench in the insulator to the drain regions. Finally, the method includes growing an epitaxial junction material over the source and drain regions, and depositing a metal over the substrate."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Asymmetric junction engineering for narrow band gap MOSFET","description":"A method for forming a semiconductor device. It includes forming fin structures on a substrate, where the fin structure defines source and drain regions. It also includes forming a gate stack in conta","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10546878","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10546878","citation_suggestion":"Patentable. \"Asymmetric junction engineering for narrow band gap MOSFET\" (US-10546878). https://patentable.app/patents/US-10546878","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10546878","json":"https://patentable.app/api/llm-context/US-10546878","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T20:34:07.712Z"}