{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10546918","patent":{"patent_number":"US-10546918","title":"Multilayer buried metal-insultor-metal capacitor structures","assignee":null,"inventors":[],"filing_date":"2019-08-09T00:00:00.000Z","publication_date":"2020-01-28T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":20,"abstract":"Metal-on-metal insulator structures and methods for making the same. The method includes: providing an insulator layer overlying a semiconductor substrate, forming a plurality of alternating first conductive layers and second conductive layers on the insulator layer, forming at least one dielectric layer between each of the alternating first conductive layers and second conductive layers, forming a first trench at a first location through a first portion of the plurality of the alternating first conductive layers and second conductive layers and the at least one dielectric layer, and first etching the first trench selective to the plurality of alternating first conductive layers and second conductive layers, wherein the first conductive layers are etched faster than the second conductive layers to form a first modified trench, wherein the first conductive layers are recessed relative to the center of the first modified trench greater than the second conductive layers."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Multilayer buried metal-insultor-metal capacitor structures","description":"Metal-on-metal insulator structures and methods for making the same. The method includes: providing an insulator layer overlying a semiconductor substrate, forming a plurality of alternating first con","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10546918","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10546918","citation_suggestion":"Patentable. \"Multilayer buried metal-insultor-metal capacitor structures\" (US-10546918). https://patentable.app/patents/US-10546918","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10546918","json":"https://patentable.app/api/llm-context/US-10546918","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T17:18:25.175Z"}