{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10546925","patent":{"patent_number":"US-10546925","title":"Vertically stacked nFET and pFET with dual work function","assignee":null,"inventors":[],"filing_date":"2017-11-02T00:00:00.000Z","publication_date":"2020-01-28T00:00:00.000Z","cpc_codes":["B82Y","H01L","H01L","H01L","H01L"],"num_claims":12,"abstract":"A semiconductor structure is provided that includes a pFET device including a first functional gate structure containing at least a p-type work function metal and present on physically exposed surfaces, and between, each Si channel material nanosheet of a first set of vertically stacked and suspended Si channel material nanosheets. The structure further includes an nFET device stacked vertically above the pFET device. The nFET device includes a second functional gate structure containing at least an n-type work function metal present on physically exposed surfaces, and between, each Si channel material nanosheet of a second set of vertically stacked and suspended Si channel material nanosheets."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Vertically stacked nFET and pFET with dual work function","description":"A semiconductor structure is provided that includes a pFET device including a first functional gate structure containing at least a p-type work function metal and present on physically exposed surface","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10546925","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10546925","citation_suggestion":"Patentable. \"Vertically stacked nFET and pFET with dual work function\" (US-10546925). https://patentable.app/patents/US-10546925","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10546925","json":"https://patentable.app/api/llm-context/US-10546925","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T14:48:10.847Z"}