{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10546932","patent":{"patent_number":"US-10546932","title":"Semiconductor device, substrate, method for manufacturing semiconductor device, and method for manufacturing substrate","assignee":null,"inventors":[],"filing_date":"2018-08-06T00:00:00.000Z","publication_date":"2020-01-28T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":12,"abstract":"According to one embodiment, a semiconductor device includes a first semiconductor region including first and second compounds including silicon and carbon. The first semiconductor region includes first to third regions contacting the second semiconductor region. The third region is positioned between the first and second regions. The first and second regions include a first element. The first element includes at least one selected from the group consisting of second and third elements. The second element includes at least one selected from the group consisting of Ar, Kr, Xe, and Rn. The third element includes at least one selected from the group consisting of Cl, Br, I, and At. The third region does not include the first element, or a concentration of the first element in the third region is lower than concentrations of the first element in the first and second regions."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device, substrate, method for manufacturing semiconductor device, and method for manufacturing substrate","description":"According to one embodiment, a semiconductor device includes a first semiconductor region including first and second compounds including silicon and carbon. The first semiconductor region includes fir","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10546932","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10546932","citation_suggestion":"Patentable. \"Semiconductor device, substrate, method for manufacturing semiconductor device, and method for manufacturing substrate\" (US-10546932). https://patentable.app/patents/US-10546932","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10546932","json":"https://patentable.app/api/llm-context/US-10546932","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T18:25:17.438Z"}