{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10546936","patent":{"patent_number":"US-10546936","title":"Structure for reduced source and drain contact to gate stack capacitance","assignee":null,"inventors":[],"filing_date":"2019-02-26T00:00:00.000Z","publication_date":"2020-01-28T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":13,"abstract":"A structure of a semiconductor device is described. A semiconductor device includes a transistor which further includes a gate structure, a source region and a drain region disposed on a first surface of a substrate. A wiring layer of conductive material is disposed over a second surface of the substrate. The second surface of the substrate is located opposite to the first surface of the substrate. A set of contact studs including a first contact stud which extends completely through the source region and through the substrate to a first respective portion of the wiring layer. The set of contact studs also includes a second contact stud which extends completely through the drain region and through the substrate to a second respective portion of the wiring layer. A gate contact stud electrically couples the gate structure and extends completely through the substrate to a third respective portion of the wiring layer disposed over the second surface of the substrate."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Structure for reduced source and drain contact to gate stack capacitance","description":"A structure of a semiconductor device is described. A semiconductor device includes a transistor which further includes a gate structure, a source region and a drain region disposed on a first surface","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10546936","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10546936","citation_suggestion":"Patentable. \"Structure for reduced source and drain contact to gate stack capacitance\" (US-10546936). https://patentable.app/patents/US-10546936","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10546936","json":"https://patentable.app/api/llm-context/US-10546936","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T10:00:35.507Z"}