{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10546943","patent":{"patent_number":"US-10546943","title":"Methods, apparatus, and system for reducing leakage current in semiconductor devices","assignee":null,"inventors":[],"filing_date":"2018-04-24T00:00:00.000Z","publication_date":"2020-01-28T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":14,"abstract":"Methods, apparatus, and systems for forming a semiconductor substrate comprising a well region containing a first impurity; forming a gate on the semiconductor substrate above the well region; implanting a second impurity, of a type opposite the first impurity, in the well region on each side of the gate and to a depth above a bottom of the well region, to form two second impurity regions each having a first concentration; removing an upper portion of each second impurity region, to yield two source/drain (S/D) cavities above two depletion regions; and growing epitaxially a doped S/D region in each S/D cavity, wherein each S/D region comprises the second impurity having a second concentration greater than the first concentration."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Methods, apparatus, and system for reducing leakage current in semiconductor devices","description":"Methods, apparatus, and systems for forming a semiconductor substrate comprising a well region containing a first impurity; forming a gate on the semiconductor substrate above the well region; implant","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10546943","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10546943","citation_suggestion":"Patentable. \"Methods, apparatus, and system for reducing leakage current in semiconductor devices\" (US-10546943). https://patentable.app/patents/US-10546943","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10546943","json":"https://patentable.app/api/llm-context/US-10546943","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T08:44:02.285Z"}