{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10546948","patent":{"patent_number":"US-10546948","title":"Electronic device including an insulated gate bipolar transistor having a field-stop region and a process of forming the same","assignee":null,"inventors":[],"filing_date":"2018-09-11T00:00:00.000Z","publication_date":"2020-01-28T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":20,"abstract":"An electronic device can include a semiconductor substrate having a front side and a back side; an emitter region closer to the front side than to the back side; a trench extending from a back side surface into the semiconductor substrate, wherein the trench has a sidewall and a bottom; a collector region along the back side surface and spaced apart from the bottom of the trench; a field-stop region lying along the bottom and at least a portion of the sidewall of the trench, wherein the emitter and field-stop regions have one conductivity type, and the collector region has the opposite conductivity type; and a collector terminal along the back side and including a metal-containing material, wherein the collector terminal contacts the collector region and is isolated from the field-stop region. A process of forming the electronic device does not require complex or marginal processing operations."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Electronic device including an insulated gate bipolar transistor having a field-stop region and a process of forming the same","description":"An electronic device can include a semiconductor substrate having a front side and a back side; an emitter region closer to the front side than to the back side; a trench extending from a back side su","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10546948","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10546948","citation_suggestion":"Patentable. \"Electronic device including an insulated gate bipolar transistor having a field-stop region and a process of forming the same\" (US-10546948). https://patentable.app/patents/US-10546948","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10546948","json":"https://patentable.app/api/llm-context/US-10546948","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T18:24:21.436Z"}