{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10546957","patent":{"patent_number":"US-10546957","title":"Nanosheet FET including all-around source/drain contact","assignee":null,"inventors":[],"filing_date":"2018-01-11T00:00:00.000Z","publication_date":"2020-01-28T00:00:00.000Z","cpc_codes":["B82Y","H01L","H01L","H01L","H01L"],"num_claims":16,"abstract":"A semiconductor device includes a semiconductor wafer having one or more suspended nanosheet extending between first and second source/drain regions. A gate structure wraps around the nanosheet stack to define a channel region located between the source/drain regions. The semiconductor device further includes a first all-around source/drain contact formed in the first source/drain region and a second all-around source/drain contact formed in the second source/drain region. The first and second all-around source/drain contacts each include a source/drain epitaxy structure and an electrically conductive external portion that encapsulates the source/drain epitaxy structure."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Nanosheet FET including all-around source/drain contact","description":"A semiconductor device includes a semiconductor wafer having one or more suspended nanosheet extending between first and second source/drain regions. A gate structure wraps around the nanosheet stack ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10546957","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10546957","citation_suggestion":"Patentable. \"Nanosheet FET including all-around source/drain contact\" (US-10546957). https://patentable.app/patents/US-10546957","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10546957","json":"https://patentable.app/api/llm-context/US-10546957","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T18:52:34.875Z"}