{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10546996","patent":{"patent_number":"US-10546996","title":"Magnetoresistive random access memory (MRAM) structure and method of forming the same","assignee":null,"inventors":[],"filing_date":"2017-07-31T00:00:00.000Z","publication_date":"2020-01-28T00:00:00.000Z","cpc_codes":["G11C"],"num_claims":20,"abstract":"A magnetoresistive random access memory (MRAM) structure and a method of forming the same are provided. The MRAM structure includes a conductive pillar over a substrate, a first MTJ spacer and a first conductive layer. The first MTJ spacer surrounds the conductive pillar. The first conductive layer surrounds the first MTJ spacer. The first magnetic tunnel junction (MTJ) spacer includes a first electrode, a second electrode and a magnetic tunnel junction (MTJ) layer. The first electrode is in contact with the conductive pillar and the substrate. The second electrode is positioned over the first electrode and in contact with the first conductive layer. The magnetic tunnel junction (MTJ) layer is positioned between the first electrode and the second electrode."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Magnetoresistive random access memory (MRAM) structure and method of forming the same","description":"A magnetoresistive random access memory (MRAM) structure and a method of forming the same are provided. The MRAM structure includes a conductive pillar over a substrate, a first MTJ spacer and a first","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10546996","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10546996","citation_suggestion":"Patentable. \"Magnetoresistive random access memory (MRAM) structure and method of forming the same\" (US-10546996). https://patentable.app/patents/US-10546996","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10546996","json":"https://patentable.app/api/llm-context/US-10546996","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T01:35:42.869Z"}