{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11232943","patent":{"patent_number":"US-11232943","title":"Method and structure for semiconductor interconnect","assignee":null,"inventors":[],"filing_date":"2020-01-06T00:00:00.000Z","publication_date":"2022-01-25T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A method includes receiving a structure having a substrate, a conductive feature over the substrate, and a dielectric layer over the conductive feature. The method further includes forming a hole in the dielectric layer to expose the conductive feature; forming a first metal-containing layer on sidewalls of the hole; and forming a second metal-containing layer in the hole and surrounded by the first metal-containing layer. The first and the second metal-containing layers include different materials. The method further includes applying a first chemical to recess the dielectric layer, resulting in a top portion of the first and the second metal-containing layers protruding above the dielectric layer; and applying a second chemical having fluorine or chlorine to the top portion of the first metal-containing layer to convert the top portion of the first metal-containing layer into a metal fluoride or a metal chloride."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method and structure for semiconductor interconnect","description":"A method includes receiving a structure having a substrate, a conductive feature over the substrate, and a dielectric layer over the conductive feature. The method further includes forming a hole in t","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11232943","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11232943","citation_suggestion":"Patentable. \"Method and structure for semiconductor interconnect\" (US-11232943). https://patentable.app/patents/US-11232943","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11232943","json":"https://patentable.app/api/llm-context/US-11232943","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T12:25:26.036Z"}