{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11232950","patent":{"patent_number":"US-11232950","title":"Structure of epitaxy on heterogeneous substrate and method for fabricating the same","assignee":null,"inventors":[],"filing_date":"2019-11-01T00:00:00.000Z","publication_date":"2022-01-25T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":6,"abstract":"The invention is a special designed pattern heterogeneous substrate, which is epitaxially deposited on a heterogeneous substrate by two step growth, and a thermal cycle annealing is added to reduce the lattice mismatch between the layers and the difference in thermal expansion coefficient, thereby obtaining a better stress. The quality of the semiconductor epitaxial layer is improved, and the present invention can easily grasp the timing of stress release when the semiconductor is grown on the heterogeneous substrate, avoid cracks in the semiconductor epitaxial layer, and form a crack free zone in the middle of the semiconductor epitaxial layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Structure of epitaxy on heterogeneous substrate and method for fabricating the same","description":"The invention is a special designed pattern heterogeneous substrate, which is epitaxially deposited on a heterogeneous substrate by two step growth, and a thermal cycle annealing is added to reduce th","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11232950","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11232950","citation_suggestion":"Patentable. \"Structure of epitaxy on heterogeneous substrate and method for fabricating the same\" (US-11232950). https://patentable.app/patents/US-11232950","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11232950","json":"https://patentable.app/api/llm-context/US-11232950","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T13:28:26.639Z"}