{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11232954","patent":{"patent_number":"US-11232954","title":"Sidewall protection layer formation for substrate processing","assignee":null,"inventors":[],"filing_date":"2020-03-16T00:00:00.000Z","publication_date":"2022-01-25T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":22,"abstract":"Substrate processing techniques are described in which an etch protection layer that is formed as part of an etch process forms in a self-limiting nature. Thus, over deposition effects are minimized, particularly in the corners of etched polygonal holes. In one embodiment, the layer being etched contains silicon and the protective layer comprises a silicon oxide (SixOy). The process may include the use of a cyclical series of etch and protective layer formation steps. In the case of a silicon oxide based protective layer, a thin protective layer of silicon oxide may be formed in a limiting and controllable manner due to the nature of the oxygen atom interaction with silicon and newly formed silicon oxide protective layers. In this manner, a polygonal hole may be formed without detrimental over deposition of a protective layer in corners of the hole."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Sidewall protection layer formation for substrate processing","description":"Substrate processing techniques are described in which an etch protection layer that is formed as part of an etch process forms in a self-limiting nature. Thus, over deposition effects are minimized, ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11232954","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11232954","citation_suggestion":"Patentable. \"Sidewall protection layer formation for substrate processing\" (US-11232954). https://patentable.app/patents/US-11232954","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11232954","json":"https://patentable.app/api/llm-context/US-11232954","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T22:39:16.565Z"}