{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11232975","patent":{"patent_number":"US-11232975","title":"Semiconductor-on-insulator (SOI) substrate having dielectric structures that increase interface bonding strength","assignee":null,"inventors":[],"filing_date":"2018-12-20T00:00:00.000Z","publication_date":"2022-01-25T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":20,"abstract":"Various embodiments of the present application are directed to a method for forming a semiconductor-on-insulator (SOI) substrate without bond interface voids and/or without delamination between layers. In some embodiments, a first high κ bonding structure is formed over a handle substrate. A device layer is formed over a sacrificial substrate. Outer most sidewalls of the device layer are between outer most sidewalls of the sacrificial substrate. A second high κ bonding structure is formed over the device layer. The first high κ bonding structure is bonded to the second high κ bonding structure, such that the device layer is between the sacrificial substrate and the handle substrate. A first removal process is performed to remove the sacrificial substrate. The first removal process comprises performing a first etch into the sacrificial substrate until the device layer is reached."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor-on-insulator (SOI) substrate having dielectric structures that increase interface bonding strength","description":"Various embodiments of the present application are directed to a method for forming a semiconductor-on-insulator (SOI) substrate without bond interface voids and/or without delamination between layers","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11232975","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11232975","citation_suggestion":"Patentable. \"Semiconductor-on-insulator (SOI) substrate having dielectric structures that increase interface bonding strength\" (US-11232975). https://patentable.app/patents/US-11232975","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11232975","json":"https://patentable.app/api/llm-context/US-11232975","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T01:19:43.599Z"}