{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11232976","patent":{"patent_number":"US-11232976","title":"Treating a silicon on insulator wafer in preparation for manufacturing an atomistic electronic device interfaced with a CMOS electronic device","assignee":null,"inventors":[],"filing_date":"2018-06-29T00:00:00.000Z","publication_date":"2022-01-25T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","B82Y"],"num_claims":16,"abstract":"A method for treating a wafer is provided with a portion of a semiconductor layer is selectively removed from the wafer so as to create an inactive region of the wafer surrounding a first active region of the wafer. The inactive region of the wafer has an exposed portion of an insulator layer, but none of the semiconductor layer. The first active region of the wafer includes a first portion of the semiconductor layer and a first portion of the insulator layer. At least one conductor is formed in contact with the first portion of the semiconductor layer, such that the conductor and the first portion of the semiconductor layer form a portion of an electrical circuit. The first active region of the wafer is selectively treated to remove a native oxide layer from the first portion of the semiconductor layer. A resulting wafer is also disclosed."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Treating a silicon on insulator wafer in preparation for manufacturing an atomistic electronic device interfaced with a CMOS electronic device","description":"A method for treating a wafer is provided with a portion of a semiconductor layer is selectively removed from the wafer so as to create an inactive region of the wafer surrounding a first active regio","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11232976","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11232976","citation_suggestion":"Patentable. \"Treating a silicon on insulator wafer in preparation for manufacturing an atomistic electronic device interfaced with a CMOS electronic device\" (US-11232976). https://patentable.app/patents/US-11232976","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11232976","json":"https://patentable.app/api/llm-context/US-11232976","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T18:52:17.636Z"}