{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11232981","patent":{"patent_number":"US-11232981","title":"Semiconductor device and fabrication method thereof","assignee":null,"inventors":[],"filing_date":"2020-07-28T00:00:00.000Z","publication_date":"2022-01-25T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":15,"abstract":"A method for forming a semiconductor device includes forming a gate structure on a substrate, and a doped source/drain region on each side of the gate structure; forming a first interlayer dielectric layer, the top surface of the first interlayer dielectric layer leveled with the top surface of the gate structure; forming a contact hole in the first interlayer dielectric layer on each side of the gate structure; forming a cobalt layer in the contact hole, the top surface of the cobalt layer lower than the top surface of the first interlayer dielectric layer; forming a protective layer to cover the cobalt layer, the top layer of the protective layer lower than the top surface of the first interlayer dielectric layer; and forming a second interlayer dielectric layer, the top surface of the second interlayer dielectric layer leveled with the top surface of the first interlayer dielectric layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device and fabrication method thereof","description":"A method for forming a semiconductor device includes forming a gate structure on a substrate, and a doped source/drain region on each side of the gate structure; forming a first interlayer dielectric ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11232981","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11232981","citation_suggestion":"Patentable. \"Semiconductor device and fabrication method thereof\" (US-11232981). https://patentable.app/patents/US-11232981","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11232981","json":"https://patentable.app/api/llm-context/US-11232981","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T15:56:45.078Z"}