{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11232987","patent":{"patent_number":"US-11232987","title":"Method for fabricating a semiconductor device","assignee":null,"inventors":[],"filing_date":"2019-04-11T00:00:00.000Z","publication_date":"2022-01-25T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":12,"abstract":"A method for fabricating a semiconductor device includes: providing a first wafer including a base substrate having a first surface and a second surface facing each other, and an element region disposed on the first surface of the base substrate, in which the first wafer includes a first semiconductor chip region and a second semiconductor chip region adjacent to each other, each including a portion of the base substrate and a portion of the element region; forming a cutting pattern in the base substrate between the first semiconductor chip region and the second semiconductor chip region; grinding a part of the base substrate to form a second wafer from the first wafer; forming a stress relief layer on the second surface of the ground base substrate; and expanding the second wafer to separate the first semiconductor chip region and the second semiconductor chip region from each other."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for fabricating a semiconductor device","description":"A method for fabricating a semiconductor device includes: providing a first wafer including a base substrate having a first surface and a second surface facing each other, and an element region dispos","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11232987","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11232987","citation_suggestion":"Patentable. \"Method for fabricating a semiconductor device\" (US-11232987). https://patentable.app/patents/US-11232987","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11232987","json":"https://patentable.app/api/llm-context/US-11232987","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T14:45:57.489Z"}