{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11232990","patent":{"patent_number":"US-11232990","title":"Semiconductor device and method of manufacturing the same","assignee":null,"inventors":[],"filing_date":"2020-12-14T00:00:00.000Z","publication_date":"2022-01-25T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":19,"abstract":"A semiconductor device includes a semiconductor substrate, an insulating layer, a semiconductor layers and a silicide layer. The insulating layer is formed on the semiconductor substrate. The semiconductor layer is formed on the insulating layer and includes a polycrystalline silicon. The silicide layer is formed on the semiconductor layer. The semiconductor layer has a first semiconductor part and a second semiconductor part. The first semiconductor part includes a first semiconductor region of a first conductivity type, and a second semiconductor region of a second conductivity type. The second semiconductor part is adjacent the second semiconductor region. In a width direction of the first semiconductor part, a second length of the second semiconductor part is greater than a first length of the first semiconductor part. A distance between the first and second semiconductor regions is 100 nm or more in an extension direction in which the first semiconductor region extends."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device and method of manufacturing the same","description":"A semiconductor device includes a semiconductor substrate, an insulating layer, a semiconductor layers and a silicide layer. The insulating layer is formed on the semiconductor substrate. The semicond","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11232990","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11232990","citation_suggestion":"Patentable. \"Semiconductor device and method of manufacturing the same\" (US-11232990). https://patentable.app/patents/US-11232990","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11232990","json":"https://patentable.app/api/llm-context/US-11232990","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T13:00:49.887Z"}